Ferromagnetism in Mn- and Cr-Implanted AlGaP
نویسندگان
چکیده
Implantation of Mn or Cr at doses of 3–5 10 cm 2 into Si-doped Al0:24Ga0:76P epilayers on GaP substrates produced ferromagnetic ordering at temperatures up to 300 K. The results were similar to those obtained previously in p-type AlGaP(C), indicating that both electron and hole-doped AlGaP can exhibit ferromagnetism. In addition, the AlGaP results are similar to those for GaP so the magnitude of the bandgap was not the main parameter influencing the Curie temperature, in contradiction to predictions from some mean-field theories. Second phases were not observed by X-ray diffraction and were not responsible for the ferromagnetism. 2003 Published by Elsevier Science Ltd.
منابع مشابه
Ferromagnetism and microstructure in Cr implanted p-type (100) silicon
The magnetic properties and microstructure of p-type Si (100) implanted with 1.0 × 1015 cm−2 of Cr ions at 200 keV have been investigated by a superconducting quantum interference device (SQUID) magnetometer, scanning electron microscope (SEM) and transmission electron microscopy (TEM). The magnetic hysteresis loops and saturation magnetization of 0.67–0.75 emu/g in a wide temperature range are...
متن کاملFerromagnetic GaN--Cr Nanowires.
Using first-principles theory, we predict ferromagnetism in Cr-doped GaN nanowires irrespective of the sites that the Cr atoms occupy. This is in contrast to Mn-doped GaN nanowires in which the magnetic coupling between the Mn atoms is sensitive to the Mn--Mn and Mn--N distances, although the ground state of Mn-doped GaN nanowires is ferromagnetic. Each Cr atom carries a magnetic moment of abou...
متن کاملTransport and magnetic properties of the diluted magnetic semiconductors
We report on electrical transport and magnetic properties of quaternary single crystals of Sb 1.98–x V 0.02 Cr x Te 3 and Sb 1.984–y V 0.016 Mn y Te 3 with x ranging from 0 to 0.022 and y ranging from 0 to 0.034 over temperatures from 2 K to 300 K. Ternary crystals Sb 2–z V z Te 3 were reported to have rather small magnetization in the ferromagnetic state due to low spin of vanadium ions. There...
متن کاملTransition metals in ZnGeP 2 and other II – IV – V 2 compounds
Semiconductors that exhibit room-temperature ferromagnetism are central to the development of semiconductor spintronics. Transition metal (TM)-doped ABC2 are a promising class of such system. These ternary compound semiconductors have two metal sites A and B that can be substituted by the TMs. A site preference for TM incorporation is crucial for a possible explanation of ferromagnetism since d...
متن کاملبررسی خاصیت فرومغناطیس نانوذرات اکسید روی آلایش شده با یون منگنز در دمای اتاق
In this research, work nanopowders of Zn1-xMnxO (0.0) dilute magnetic semiconductor were prepared via sol-gel autocombustion method. The crystal structure and phase purity of samples were confirmed by X-ray powder diffraction (XRD) analysis. The particle sizes were found to be 5-35 nm from Transmission Electron Microscopy (TEM) and Scherer's formula. The hysteresis in the M-H behavior shows the...
متن کامل